Product Summary

The 2SB649AC is a silicon PNP epitaxial transistor. It is suitable for Low frequency power amplifier complementary pair with 2SD669/A.

Parametrics

2SB649AC absolute maximum ratings: (1)collector to base voltage, VCBO: –180 V; (2)collector to emitter voltage, VCEO: –160 V; (3)emitter to base voltage, VEBO: –5 V; (4)collector current, IC: –1.5 A; (5)collector peak current, IC(peak): –3 A; (6)collector power dissipation, PC: 11W; (7)junction temperature, Tj: 150℃; (8)storage temperature, Tstg: –55 to +150℃.

Features

2SB649AC features: (1)Collector to base breakdown voltage, V(BR)CBO: –180V; (2)Collector to emitter breakdown voltage, V(BR)CEO: 160V; (3)Emitter to base breakdown voltage, V(BR)EBO: –5V; (4)Collector cutoff current, ICBO: –10 μA; (5)Collector to emitter saturation voltage, VCE(sat): –1V; (6)Base to emitter voltage, VBE: –1.5 V; (7)Gain bandwidth product, fT: 140 MHz; (8)Collector output capacitance, Cob: 27 pF.

Diagrams

2SB649AC dimensions

2SB613
2SB613

Other


Data Sheet

Negotiable 
2SB616
2SB616

Other


Data Sheet

Negotiable 
2SB621
2SB621

Other


Data Sheet

Negotiable 
2SB621A
2SB621A

Other


Data Sheet

Negotiable 
2SB621AQ
2SB621AQ

Other


Data Sheet

Negotiable 
2SB621AR
2SB621AR

Other


Data Sheet

Negotiable