(China (Mainland))
Product Summary
The 2SB649AC is a silicon PNP epitaxial transistor. It is suitable for Low frequency power amplifier complementary pair with 2SD669/A.
Parametrics
2SB649AC absolute maximum ratings: (1)collector to base voltage, VCBO: –180 V; (2)collector to emitter voltage, VCEO: –160 V; (3)emitter to base voltage, VEBO: –5 V; (4)collector current, IC: –1.5 A; (5)collector peak current, IC(peak): –3 A; (6)collector power dissipation, PC: 11W; (7)junction temperature, Tj: 150℃; (8)storage temperature, Tstg: –55 to +150℃.
Features
2SB649AC features: (1)Collector to base breakdown voltage, V(BR)CBO: –180V; (2)Collector to emitter breakdown voltage, V(BR)CEO: 160V; (3)Emitter to base breakdown voltage, V(BR)EBO: –5V; (4)Collector cutoff current, ICBO: –10 μA; (5)Collector to emitter saturation voltage, VCE(sat): –1V; (6)Base to emitter voltage, VBE: –1.5 V; (7)Gain bandwidth product, fT: 140 MHz; (8)Collector output capacitance, Cob: 27 pF.
Diagrams
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