IRFP360

IRFP360, N-Channel Power MOSFET, TO- 247, 400 V

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PartNumber:: IRFP360

Brand:: International Rectifier - IR | Pack: TO | D/C: 11+

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Products Upload time: 2012-05-20

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Product Summary

The IRFP360 is an N-Channel Power MOSFET. It is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. The IRFP360 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. The IRFP360 can be operated directly from integrated circuits.

Parametrics

IRFP360 absolute maximum ratings: (1)Drain to Source Voltage VDS: 400 V; (2)Drain to Gate Voltage (RGS = 20kW) VDGR: 400 V; (3)Continuous Drain Current ID: 23 A; (4)Continuous Drain Current TC = 100℃ ID: 14 A; (5)Pulsed Drain Current IDM: 92 A; (6)Gate to Source Voltage VGS: ±20 V; (7)Maximum Power Dissipation PD: 250 W; (8)Linear Derating Factor: 2 W/℃; (9)Single Pulse Avalanche Energy Rating EAS: 1200 mJ; (10)Operating and Storage Temperature TJ, TSTG: -55℃ to 150℃; (11)Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s TL: 300℃; (12)Package Body for 10s, see Techbrief 334 Tpkg: 260℃.

Features

IRFP360 features: (1)23A, 400V; (2)rDS(ON) = 0.200Ω; (3)Single Pulse Avalanche Energy Rated; (4)SOA is Power Dissipation Limited; (5)Nanosecond Switching Speeds; (6)Linear Transfer Characteristics; (7)High Input Impedance.