Product Summary
The 2N2907 is a silicon planar epitaxial PNP transistor in Jedec TO-18 metal case. It is designed for high speed saturate switching and general purpose application. The 2N2907 is approved to CECC 50002- 103 available on request.
Parametrics
2N2907 absolute maximum ratings: (1)VCBO Collector-Base Voltage (IE = 0): -60 V; (2)VCEO Collector-Emitter Voltage (IB = 0): -40 V; (3)VEBO Emitter-Base Voltage (IC = 0): -5 V; (4)IC Collector Current: -0.6 A; (5)Ptot Total Dissipation at Tamb ≤ 25℃: 0.4W; (6)Ptot Total Dissipation at Tcase ≤ 25℃: 1.8W; (7)Tstg Storage Temperature: -65℃ to 200℃; (8)Tj Max. Operating Junction Temperature: 200℃.
Features
2N2907 features: (1)Collector cut- off: - 20nA; (2)Current (IE = 0): - 20μA; (3)Collector-Base Breakdown Voltage (IE = 0): -60 V; (4)Transition Frequency: 200MHz; (5)Collector Base Capacitance: 8pF; (6)Delay Time: 10 ns.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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2N2907 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP Silicon |
Data Sheet |
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2N2907A |
Central Semiconductor |
Transistors Bipolar (BJT) PNP Gen Pur SS |
Data Sheet |
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2N2907A-BP |
Micro Commercial Components (MCC) |
Transistors Bipolar (BJT) PNP Swt Trans 400mW, 60V, 600mA |
Data Sheet |
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2N2907ACSM |
Other |
Data Sheet |
Negotiable |
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2N2907ADCSM |
Other |
Data Sheet |
Negotiable |
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2N2907ADIE |
Other |
Data Sheet |
Negotiable |
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2N2907AL |
Other |
Data Sheet |
Negotiable |
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2N2907AQLCC20 |
Other |
Data Sheet |
Negotiable |
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