Product Summary

The 2SC3217 is a RF high power transistor. It permits he design of a class AB push- pull broadband amplifier having a good degree of linearity.

Parametrics

2SC3217 absolute maximum ratings: (1)VCBO Collector- base voltage: 50 V; (2)VEBO Emitter- base voltage: 3 V; (3)IC Continuous collector current: 4 A; (4)PC collector power dissipation 43 W; (5)TJ Junction temperature: 200℃; (6)Rth( j- c) Junction- case thermal resistance: 3.2℃/ W.

Features

2SC3217 features: (1)High gain and high power output at 860Mhz; (2)Push-pull structure allows easy design of wideband ampilifer; (3)Internal emmiter balance resistor; (4)Internal inpedance matching circuit; (5)High reliablity due to gold electrodes.

Diagrams

2SC3217 package dimensions

2SC3000
2SC3000

Other


Data Sheet

Negotiable 
2SC3011
2SC3011

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2SC3012
2SC3012

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Data Sheet

Negotiable 
2SC3025
2SC3025

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Negotiable 
2SC3026
2SC3026

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Data Sheet

Negotiable 
2SC3038
2SC3038

Other


Data Sheet

Negotiable