(China (Mainland))
Product Summary
The IS61C256AL is a very high-speed, low power, 32,768 word by 8-bit static RAM. It is fabricated using ISS’s high-performance CMOS technology. When CE is HIGH (deselected), the IS61C256AL assumes astandby mode at which the power dissipation can be reduced down to 150 μW (typical) with CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Enable (CE) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS61C256AL is pin compatible with other 32Kx8 SRAMs and are available in 28-pin SOJ and TSOP (Type I) packages.
Parametrics
IS61C256AL absolute maximum ratings: (1)Vterm Terminal Voltage with Respect to GND: –0.5 V to +7.0 V; (2)Tstg Storage Temperature: –65℃ to +150℃; (3)Pt Power Dissipation: 1.5 W; (4)Iout DC Output Current (LOW): 20 mA.
Features
IS61C256AL features: (1)High-speed access time: 10, 12 ns; (2)CMOS Low Power Operation; (3)1 mW (typical) CM OS standby; (4)125 mW (typical) operating; (5)Fully static operation: no clock or refresh required; (6)TTL compatible inputs and outputs; (7)Single 5V power supply.
Diagrams
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 IS61C256AL |
Other |
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Data Sheet |
Negotiable |
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IS61C256AL-12JLI |
ISSI |
SRAM 256K 32Kx8 12ns Async SRAM |
Data Sheet |
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IS61C256AL-12TLI |
ISSI |
SRAM 256K 32Kx8 12ns Async SRAM |
Data Sheet |
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IS61C256AL-12JLI-TR |
ISSI |
SRAM 256K 32Kx8 12ns Async SRAM |
Data Sheet |
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IS61C256AL-12TLI-TR |
ISSI |
SRAM 256K 32Kx8 12ns Async SRAM |
Data Sheet |
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