(China (Mainland))
Product Summary
The MG600Q1US51 is a silicon N- Channel IGBT.
Parametrics
MG600Q1US51 absolute maximum ratings: (1)collector- emitter voltage: 1200V; (2)Gate- emitter voltage: ± 20V; (3)Collector current DC: 600A; (4)Forward current DC: 600A; (5)Collector power dissipation: 4100W; (6)Juncton temperature: 150℃; (7)Storage temperature range: -40℃ to +125℃.
Features
MG600Q1US51 features: (1)High input impedance; (2)High speed; (3)Low saturation voltage; (4)Enhancement- mode; (5)Includes a complete half bridge in one package; (6)The elecrodes are isolated from case.
Diagrams
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 MG600J2YS60A |
Other |
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Data Sheet |
Negotiable |
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MG600J2YS61A |
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IGBT MOD CMPCT DUAL 600V 600A |
Data Sheet |
Negotiable |
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MG600Q1US61 |
Other |
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Data Sheet |
Negotiable |
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MG600Q2YS60A |
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IGBT MOD CMPCT 1200V 600A |
Data Sheet |
Negotiable |
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