Product Summary

The MRF847 is an NPN Silicon RF Power Transistor. It is designed for 12.5 volt UHF large- signal, common–base amplifier applications in industrial and commercial FM equipment operating in the range of 806–960 MHz.

Parametrics

MRF847 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 16.5 Vdc; (2)Collector–Base Voltage VCBO: 38 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 12 Adc; (5)Total Device Dissipation @ TA = 25℃ PD: 150 Watts; (6)Derate above 25℃ PD: 0.85 W/℃; (7)Storage Temperature Range Tstg: –65℃ to +150℃; (8)Junction Temperature TJ: 200℃.

Features

MRF847 features: (1)Series Equivalent Large- signal Characterization; (2)Internally Matched Input for Broadband Operation; (3)Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @ High Line and Rated Drive; (4)Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration; (5)Silicon Nitride Passivated.

Diagrams

MRF847 package dimensions

MRF837
MRF837
Other

Data Sheet
Negotiable 
MRF8372LF
MRF8372LF
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $1.62
1-10: $1.35
10-25: $1.22
25-50: $1.08
MRF8372LFR1
MRF8372LFR1
TriQuint Semiconductor
RF Amplifier RF Bipolar Trans
Data Sheet
Negotiable 
MRF8372LFR2
MRF8372LFR2
TriQuint Semiconductor
RF Amplifier RF Bipolar Trans
Data Sheet
Negotiable 
MRF838A
MRF838A
Other

Data Sheet
Negotiable 
MRF839F
MRF839F
Other

Data Sheet
Negotiable