(China (Mainland))
Product Summary
The 2N6306 is an NPN Power silicon transistor.
Parametrics
2N6306 absolute maximum ratings: (1)VCEO: 250 V; (2)IC(CONT): 8 A; (3)hFE @ 5/3 (VCE / IC): 15 to 75; (4)ft: 5MHz; (5)PD: 125 W.
Features
2N6306 features: (1)Bipolar NPN Device; (2)in a Hermetically sealed TO3 Metal Package.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2N6306 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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2N6300 |
Other |
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Data Sheet |
Negotiable |
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2N6301 |
Other |
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Data Sheet |
Negotiable |
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2N6302 |
Other |
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Data Sheet |
Negotiable |
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2N6303 |
Other |
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Data Sheet |
Negotiable |
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2N6304 |
Other |
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Data Sheet |
Negotiable |
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2N6306 |
Other |
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Data Sheet |
Negotiable |
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