Product Summary
The BLF368 is a VHF push-pull power MOS transistor. It is a Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The BLF368 is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the BLF368.
Parametrics
BLF368 absolute maximum ratings: (1)VDSS drain-source voltage: 65 V; (2)VGSS gate-source voltage: ±20 V; (3)ID drain current (DC): - 25 A; (4)Ptot total power dissipation (Tmb ≤ 25℃ total device; both sections equally loaded): 500 W; (5)Tstg storage temperature: -65℃ to 150℃; (6)Tj junction temperature: 200℃.
Features
BLF368 features: (1)High power gain; (2)Easy power control; (3)Good thermal stability; (4)Gold metallization ensures excellent reliability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BLF368 |
NXP Semiconductors |
Transistors RF MOSFET Power BULK TNS-RFUH |
Data Sheet |
Negotiable |
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BLF368,112 |
NXP Semiconductors |
Transistors RF MOSFET Power BULK TNS-RFUH |
Data Sheet |
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