Product Summary

The BSM50GP120 is an IGBT module.

Parametrics

BSM50GP120 absolute maximum ratings: (1)repetitive peak reverse voltage:1600 V; (2)RMS forward current per chip:40 A; (3)DC forward current:50 A; (4)surge forward current:400 A; (5)collector-emitter voltage:1200 V; (6)DC-collector current:80 A; (7)repetitive peak collector current:100 A; (8)total power dissipation:360 W; (9)gate-emitter peak voltage:± 20V.

Features

BSM50GP120 features: (1)gate-emitter leakage current:300nA; (2)turn on delay time (inductive load):60ns; (3)rise time (inductive load):45ns; (4)turn off delay time (inductive load):400ns; (5)fall time (inductive load):30ns; (6)turn-on energy loss per pulse:6.5mWs; (7)turn-off energy loss per pulse:6mWs; (8)SC Data:300A; (9)peak reverse recovery current:75A; (10)recovered charge:12μAs; (11)reverse recovery energy:4mWs; (12)rated resistance:5kΩ; (13)deviation of R100:-5% to 5%; (14)power dissipation:20mW; (15)B-value:3375K.

Diagrams

BSM50GP120 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM50GP120
BSM50GP120

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Data Sheet

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