(China (Mainland))
Product Summary
This P-Channel MOSFET FDS6681Z is produced using Fairchild Semiconductor advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. The FDS6681Z is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Parametrics
FDS6681Z absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 30V; (2)Gate-Source Voltage, VGSS: ±25V; (3)Drain Current, Continuous, ID: 20A; (4)Drain Current, Pulsed, ID: 105A; (5)Power Dissipation for Single Operation, PD: 2.5W; (6)Operating and Storage Junction Temperature Range, TJ, TSTG: –55 to +150℃.
Features
FDS6681Z features: (1)-20A, -30V RDS(ON) = 4.6mΩ @ VGS = -10V RDS(ON) = 6.5 mΩ @ VGS = -4.5V; (2)Extended VGSS range (-25V) for battery applications; (3)HBM ESD protection level of 8kV typical; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability; (6)Termination is Lead-free and RoHS Compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 FDS6681Z |
Fairchild Semiconductor |
MOSFET 30V P-Channel PowerTrench MOSFET |
Data Sheet |
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