(China (Mainland))
Product Summary
The BT137-600E is a triacs sensitive gate. Glass passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. The typical applications of the BT137-600E include motor control, industrial and domestic lighting, heating and static switching.
Parametrics
BT137-600E absolute maximum ratings: (1)Repetitive peak off-state voltages, VDRM: 600V; (2)RMS on-state current Non-repetitive peak on-state current, full sine wave; Tmb ≤ 102℃, full sine wave; Tj = 25℃ prior to surge, IT(RMS),ITSM: 8 A; t = 20 ms, IT(RMS),ITSM: 65 A; t = 16.7 ms, IT(RMS),ITSM: 71 A; (3)I2t for fusing Repetitive rate of rise of on-state current after triggering, t = 10 ms, ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/μs, I2t dIT/dt: 21 A2s; (4)Peak gate current, IGM: 2 A; (5)Peak gate voltage, VGM: 5 V; (6)Peak gate power, PGM: 5 W; (7)Average gate power, over any 20 ms period, PG(AV): 0.5 W; (8)Storage temperature, Tstg: -40 to 150℃; (9)Operating junction, Tj: 125℃.
Features
BT137-600E features: (1)Gate trigger current, VD = 12 V; IT = 0.1A, T2+ G+, IGT: 5mA; T2+ G-, IGT: 8mA; T2- G-, IGT: 11mA; T2- G+, IGT: 30mA; (2)Latching current, VD = 12 V; IGT = 0.1 A, T2+ G+, IL: 7mA; T2+ G-, IL: 16mA; T2- G-, IL: 5mA; T2- G+, IL: 7mA; (3)Holding current, VD = 12 V; IGT = 0.1A, IH: 5mA; (4)On-state voltage, IT = 10 A, VT: 1.3V; (5)Gate trigger voltage, VD = 12 V; IT = 0.1 A, VGT: 0.7V; (6)Off-state leakage current, VD = VDRM(max), Tj = 125℃; ID: 0.1mA.
Diagrams
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 BT137-600E |
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Data Sheet |
Negotiable |
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BT137-600E,127 |
NXP Semiconductors |
Triacs RAIL TRIAC |
Data Sheet |
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BT137-600E/L01,127 |
NXP Semiconductors |
Triacs Thyristor TRIAC 600V 71A 3-Pin (3+Tab) |
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