(China (Mainland))
Product Summary
The KSC5502TU is an NPN Planar Silicon Transistor. It is a High Voltage Power Switch Mode Application.
Parametrics
KSC5502TU absolute maximum ratings: (1)BVCBO Collector-Base Voltage: 1200 V; (2)BVCEO Collector-Emitter Voltage: 600 V; (3)BVEBO Emitter-Base Voltage: 12 V; (4)IC Collector Current (DC) : 2 A; (5)ICP Collector Current (Pulse) : 4 A; (6)IB Base Current (DC) : 1 A; (7)IBP Collector Current (Pulse) : 2 A; (8)PC Collector Dissipation(TC=25℃) : 50 W; (9)TJ Junction Temperature: 150℃; (10)TSTG Storage Junction Temperature Range: - 65℃ ~ 150℃; (11)EAS Avalanche Energy(Tj=25℃) : 2.5 mJ.
Features
KSC5502TU features: (1)Small Variance in Storage Time; (2)Wide Safe Operating Area; (3)Suitable for Electronic Ballast Application.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 KSC5502TU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Planar Silicon |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||||||||||
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Data Sheet |
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Data Sheet |
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Data Sheet |
Negotiable |
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