Product Summary

The M25PE40-VMN6TP is a 4Mb (512Kb x 8 bit) serial-paged Flash memory device accessed by a high-speed SPI-compatible bus. The M25PE40-VMN6TP can be written or programmed 1 to 256 bytes at a time using the PAGE WRITE or PAGE PROGRAM command. The PAGE WRITE command consists of an integrated PAGE ERASE cycle followed by a PAGE PROGRAM cycle. The M25PE40-VMN6TP is organized as 8 sectors, divided into 16 subsectors each (128 subsectors total). Each sector contains 256 pages and each subsector contains 16 pages. Each page is 256 bytes wide. The entire memory can be viewed as consisting of 2048 pages, or 524,288 bytes.

Parametrics

M25PE40-VMN6TP Absolute Maximum Ratings: (!) Tstg: -65℃~150℃; (2)Vin: -0.6V~Vcc+0.6V; (3)Vcc: -0.6V~4.0V; (4)Vesd: -2000V~2000V.

Features

M25PE40-VMN6TP features: (1)4Mb of page-erasable Flash memory; (2)2.7V to 3.6V single supply voltage; (3)SPI bus-compatible serial interface; (4)75 MHz clock rate (maximum); (5)Page size: 256 bytes; (6)Page write in 11ms (TYP); (7)Page program in 0.8ms (TYP); (8)Page erase in 10ms (TYP); (9)Subsector erase: 4KB; (10)Sector erase: 64KB; (11)Bulk erase: 4Mb; (12)Deep power-down mode: 1μA (TYP); (13)Electronic signature; (14)JEDEC standard 2-byte signature (8013h); (15)Software write-protection on a 64KB sector basis; (16)Hardware write protection of the memory area selected; (17)using the BP0, BP1, and BP2 bits; (18)More than 100,000 write cycles; (19)More than 20 years of data retention; (20)Automotive grade parts available; (21)Packages (RoHS compliant):VFQFPN8 (MP) 6mm x 5mm (MLP8); (22)SO8W (MW) 208 mils; (23)SO8N (MN) 150 mils.

Diagrams

M25PE40-VMN6TP block diagram

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