Product Summary

The IS61C256AL is a very high-speed, low power, 32,768 word by 8-bit static RAM. It is fabricated using ISS’s high-performance CMOS technology. When CE is HIGH (deselected), the IS61C256AL assumes astandby mode at which the power dissipation can be reduced down to 150 μW (typical) with CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Enable (CE) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS61C256AL is pin compatible with other 32Kx8 SRAMs and are available in 28-pin SOJ and TSOP (Type I) packages.

Parametrics

IS61C256AL absolute maximum ratings: (1)Vterm Terminal Voltage with Respect to GND: –0.5 V to +7.0 V; (2)Tstg Storage Temperature: –65℃ to +150℃; (3)Pt Power Dissipation: 1.5 W; (4)Iout DC Output Current (LOW): 20 mA.

Features

IS61C256AL features: (1)High-speed access time: 10, 12 ns; (2)CMOS Low Power Operation; (3)1 mW (typical) CM OS standby; (4)125 mW (typical) operating; (5)Fully static operation: no clock or refresh required; (6)TTL compatible inputs and outputs; (7)Single 5V power supply.

Diagrams

IS61C256AL block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IS61C256AL
IS61C256AL

Other


Data Sheet

Negotiable 
IS61C256AL-12JLI
IS61C256AL-12JLI

ISSI

SRAM 256K 32Kx8 12ns Async SRAM

Data Sheet

0-1: $0.80
1-25: $0.73
25-100: $0.64
100-500: $0.56
IS61C256AL-12TLI
IS61C256AL-12TLI

ISSI

SRAM 256K 32Kx8 12ns Async SRAM

Data Sheet

0-1: $0.80
1-25: $0.73
25-100: $0.64
100-500: $0.56
IS61C256AL-12JLI-TR
IS61C256AL-12JLI-TR

ISSI

SRAM 256K 32Kx8 12ns Async SRAM

Data Sheet

0-1000: $0.64
1000-2000: $0.61
2000-5000: $0.59
5000-10000: $0.58
IS61C256AL-12TLI-TR
IS61C256AL-12TLI-TR

ISSI

SRAM 256K 32Kx8 12ns Async SRAM

Data Sheet

0-2000: $0.61
2000-6000: $0.59
6000-10000: $0.58